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Ion Implant - Eaton

CAC Name: Eaton Implanter

Ion Implanter

Eaton Ion Implanter Backup: Michael Skvarla
Equipment Training
Training is not offered for the Eaton ion implanter. All implants are performed by designated CNF staff. Contact Chris Alpha or Rob via E-mail with implant requests. Please try to schedule your implant at least week or so days before you need it. Normal operating times are from 8:00am to 4:00pm Monday through Friday. To determine the amount of time needed for implantation, base your implant time on a dose of 1e16/hr plus 1/2hr set up time.

Description:

The Eaton NV-6200AV is a medium current Ion Implanter capable of implanting dopants at beam energies from 10 to 190 KEV. Currently Arsine, Phosphine, Boron Trifluoride, Carbon Dioxide, Argon and Helium are available for implant. The implanter is configured for 6" wafers but carrier wafers are available for implanting 4" wafers or pieces.

Capabilities:

  • Arsine
  • Phosphine
  • Boron Triflouride
  • Carbon Dioxide
  • Argon
  • Helium
  • 6


Results:


Image #1 is a SIMS analysis of an Arsenic implant into silicon with a dose of 5E15 at a beam energy of 150 KEV.

Image #2 is a SIMS analysis of an Phosphorous implant into silicon with a dose of 5E15 at a beam energy of 100 KEV.


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