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FURNACE PROCESSING
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LPCVD CMOS Nitride - E4

CAC Name: LPCVD CMOS Nitride

LPCVD Nitride

Manager: Phil Infante
Backup: Aaron Windsor , Daniel McCollister
Equipment Training
Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Description:

The LPCVD CMOS Silicon Nitride furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH2Cl2, NH3, and N2O. CVD silicon nitride films with controlled stress and high temperature oxide (HTO) can be deposited. Samples are restricted to silicon based materials only and CMOS specific tool and film limitations.


Additional Resources:

Equipment Information Sheet
Location of tool in cleanroom (jpg)


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