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FURNACE PROCESSING
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Wet/Dry Oxide - B2

CAC Name: Oxide

MRL Industries Furnace for oxidation of silicon substrates

Manager: Phil Infante
Backup: Aaron Windsor , Daniel McCollister
Equipment Training
Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Description:

The Thermal Oxidation Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with an external torch for pyrogenic wet oxidation, high and low O2 flow controllers for dry oxidation and O2/inert mixtures, as well as N2 and Ar anneal ambient. Samples are restricted to silicon based materials only.

Capabilities:

  • Wet and dry oxidation
  • HCL during oxidation up to a 4% level
  • Low flow O2 processes
  • Anneals in N2 or Ar ambient
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1200°C on select processes


Additional Resources:

Equipment Information Sheet
Oxide Furnace Growth Curves
B2 Oxide Furnace Instructions
Location of tool in cleanroom (jpg)


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