MRL Industries Furnace for low temperature oxide deposition on silicon based substrates

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Compatibility:
1E - Silicon Based Materials and Select Dieletrics
Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use designated MOS holders, wands and tweezeers
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank B

The LPCVD Low Temperature Oxide furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH4 and O2. Samples are restricted to silicon based materials only.

Capabilities
  • Low Temperature deposited Oxide
  • 20 nm/min dep rate at 425°C
Equipment Information Sheet