Solid source phosphorus diffusion tube

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Compatibility:
1E - Silicon Based Materials and Select Dieletrics
Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank D

The Phosphorus Doping Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is configured for utilizing solid source wafers for silicon doping. The furnace is restricted to silicon materials.

Processes Available

Solid Source diffusion on phosphorus into silicon wafers or polysilicon films.

Equipment Information Sheet