Oxford PlasmaLab 100 Inductively Coupled Plasma (ICP) System for Fluorine based SiO2/Quartz etching

To schedule a training, please contact the Tool Manager(s).

Compatibility:
2 - Silicon Based Substrates and Select Refractory Metals
Additional Restrictions
  • No high vapor pressure materials (lead, indium, ITO, etc.)
  • No Pyrex or Borofloat etching
  • Limited metals allowed - please discuss with tool manager (Ni not allowed as an etch mask)
Manager
Jeremy Clark
Backups:
Tom Pennell
Oxford 100

The Oxford Plasmalab 100 is an inductively coupled plasma based system that is configured for silicon-based dielectric etching. The system consists of one ICP process module connected to a single automated wafer transfer load lock. It is equipped with Helium backside cooling and a 10C electrode.

Capabilities
  • Fluorinated gases: CHF3, CH3F, CF4, CH2F2, C4F6, C4F8
  • Other gases: CO2, Ar, O2, N2, He
Processes Available
  • Etched Materials: Thermal, ALD, PECVD, and LPCVD oxides and nitrides
  • Glasses: Quartz and Fused silica only- no Pyrex or Borofloat allowed
  • HfO2, TiO2, TaO5, and similar
Equipment Information Sheet
Resources:
Etch Baseline Data