The Boron Doping Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is configured for utilizing solid source wafers for silicon doping. The furnace is restricted to silicon materials
Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.
Furnaces for growing silicon oxide and depositing polysilicon, silicon nitride, and silicon oxide as well as processes for cleaning the wafers before deposition.