Description

Dry etching systems for transferring your nanoscale patterns into your substrates.

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AJA Ion Mill

The AJA Ion Mill is a 22cm diameter Kaufman RF-ICP gridded ion source producing a collimated Argon ion beam which provides uniform etching of samples up to 6 inch diameter. The sample holder is water cooled at 20 degrees C. and has motorized tilt (0-180 degrees), and continuous sample rotation up to 25 RPM. The system is Cryo Pumped with a base pressure in the 10-8 torr range.

Aura 1000 Resist Strip

The Gasonics Aura 1000 utilizes a microwave source to create a stream of reactive oxygen for dry stripping of photoresist downstream from the microwave source. A heat lamp is used to raise the wafer temperature during the stripping process. The tool is setup for cassette to cassette processing of 4-inch wafers. Contact staff for information regarding other wafer sizes.

Hamatech Hot Piranha

The Hamatech wafer processor is capable of doing a hot piranha (Sulfuric Acid and Hydrogen Peroxide) clean on photomasks (4, 5, & 7 inch) and wafers (3, 4, and 6 inch). It is also capable of performing ammonium hydroxide brush cleans of substrates.

Hamatech Hot SC1/SC2

This Hamatech is a wafer processor is capable of doing a SC-1 (Ammonium Hydroxide and Hydrogen Peroxide) clean and SC-2 (Hydrochloric Acid and Hydrogen Peroxode) on photomasks (4, 5, & 7 inch) and wafers (3, 4, and 6 inch). The DI water gets heated and then it is combined with the process chemistry.

Hot Phosphoric Tank

A wet deck with various acid etching tanks and two spray dump rinsers is available for processing wafers. All tanks are recirculated with filtration to provide clean wafer processing. The tanks are sized to handle up to a 150 mm wafer boat. The following chemistries are present in the wet deck:

KOH Etching

The hood consists of a stainless steel heated tank for the exclusive use of KOH - potassium hydroxide. The bath has a recirculation pump and filter and also ultrasonics may be used to enhance uniformity. Potassium Hydroxide (KOH) is used for selective crystallographic etching of silicon. For example, KOH will preferentially etch the <100> plane of silicon 400x faster than the <111> plane. This creates a V-etch or pyramidal cavity. The dimensions and geometry of which are dependent upon the etch mask aperture and wafers crystal orientation.

Oxford 100 Etcher

The Oxford Plasmalab100 is an inductively coupled plasma based system that is configured for silicon based dielectric etching. The system consists of one ICP process module connected to a single automated wafer transfer load lock. It is equipped with He backside cooling and has a temperature controlled electrode.

Oxford 81 Etcher

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch silicon dioxide, silicon nitride, and silicon. Other gasses available are argon and oxygen.

Oxford 82 Etcher

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch silicon dioxide, silicon nitride, and silicon. Other gasses available are argon and oxygen.

Oxford Cobra ICP Etcher

The Oxford PlasmaPro system 100-380 is configured for nanoscale etching. The system is an inductively coupled plasma (ICP) based reactive ion etch platform with a very large plasma generation area of 380mm in diameter. This combined with the large 240mm electrode diameter allows for highly uniform etching over a 200mm sized area. The ICP is powered with a 3kw RF generator operating at 2MHz achieving plasma densities over 1E+12cm-3 enabling high etch rates and selectivities.

PlasmaTherm Deep Si Etcher

The PlasmaTherm Versaline system is a state of the art tool for DRIE of silicon. It provides the etch precision and process latitude necessary to create next generation nanoscale and MEMS devices. This platform enables sub-second etch and deposition steps producing much smoother sidewalls as scalloping is reduced to a minimum.

PT72 Etcher

This 10-inch diameter parallel plate, turbo-pumped RIE system is dedicated to applications involving fluorine based plasmas including CHF3, CF4, and SF6. Applications include anisotropic etching of silicon, silicon dioxide and silicon nitride. Etch rates of common materials vary from about 10 nm/min up to 50 nm/min.

PT720

The 720/740 is a dual chamber loadlocked system. The right 720 side is for silicon etching with an oxide mask. The left 740 side is for aluminum etching with either a PR or oxide mask. Either chamber can accomodate up to 200mm wafers. Pieces can also be processed, using a fused silica carrier wafer for the right side and a sapphire wafer carrier wafer for the left side.

PT740

The 720/740 is a dual chamber loadlocked system. The right 720 side is for silicon etching with an oxide mask. The left 740 side is for aluminum etching with either a PR or oxide mask. Either chamber can accomodate up to 200mm wafers. Pieces can also be processed, using a fused silica carrier wafer for the right side and a sapphire wafer carrier wafer for the left side.

PT770 Etcher (Left Chamber)

The PT770 is a dual chamber ICP system. The left chamber is dedicated to metal etching.   The right chamber is dedicated to III-V materials only (no bulk silicon). It is equipped with both chlorine and methane based chemistry. Materials such as GaAs, InP, GaN and associated tertiaries and quarternaries can be etched successfully.

PT770 Etcher (Right Chamber)

The PT770 is a dual chamber ICP system. The left chamber is dedicated to shallow(<10u) silicon etching (both polycrystalline and single crystal)in chlorine chemistry. Only oxide masking is allowed in this chamber and etch rates up to 0.5u/min are possible. The right chamber is dedicated to III-V materials only (no bulk silicon). It is equipped with both chlorine and methane based chemistry. Materials such as GaAs, InP, GaN and associated tertiaries and quarternaries can be etched successfully.

Unaxis 770 Deep Si Etcher

A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium.

YES Asher

Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate.