Description

Dry etching systems for transferring your nanoscale patterns into your substrates.

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AJA Ion Mill

The AJA Ion Mill is a 22cm diameter Kaufman RF-ICP gridded ion source producing a collimated Argon ion beam which provides uniform etching of samples up to 6 inch diameter. The sample holder is water cooled at 20 degrees C. and has motorized tilt (0-180 degrees), and continuous sample rotation up to 25 RPM. The system is Cryo Pumped with a base pressure in the 10-8 torr range.

Aura 1000 Resist Strip

The Gasonics Aura 1000 utilizes a microwave source to create a stream of reactive oxygen for dry stripping of photoresist downstream from the microwave source. A heat lamp is used to raise the wafer temperature during the stripping process. The tool is setup for cassette to cassette processing of 4-inch wafers. Contact staff for information regarding other wafer sizes.

Hamatech Hot Piranha

The Hamatech wafer processor is capable of doing a hot piranha (Sulfuric Acid and Hydrogen Peroxide) clean on photomasks (4, 5, & 7 inch) and wafers (3, 4, and 6 inch). It is also capable of performing ammonium hydroxide brush cleans of substrates.

Hot Phosphoric Tank

Hot Phosphoric Acid - Boiling phosphoric acid is used for etching silicon nitride selectively to silicon oxide. The tank is specifically designed for nitride etching with a controller that can maintain the phosphoric acid boiling point to within 0.5°C. This setup is for electronic grade substrates only.

 

Oxford 100 Etcher

The Oxford Plasmalab100 is an inductively coupled plasma based system that is configured for silicon based dielectric etching. The system consists of one ICP process module connected to a single automated wafer transfer load lock. It is equipped with He backside cooling and has a temperature controlled electrode.

Oxford 81 Etcher

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.

The system has a 300W 13.56 MHz RF power source coupled to a matching network. The biased electrode is actively chilled to 10 degrees C. The operating pressure regime for processes in the PlasmaLab 80+ is 10 - 1000mT.

Oxford 82 Etcher

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.

The system has a 300W 13.56 MHz RF power source coupled to a matching network. The biased electrode is actively chilled to 10 degrees C. The operating pressure regime for processes in the PlasmaLab 80+ is 10 - 1000mT.

Oxford Cobra ICP Etcher

The Oxford PlasmaPro system 100-380 is configured for nanoscale etching. The system is an inductively coupled plasma (ICP) based reactive ion etch platform with a very large plasma generation area of 380mm in diameter. This combined with the large 240mm electrode diameter allows for highly uniform etching over a 200mm sized area. The ICP is powered with a 3kw RF generator operating at 2MHz achieving plasma densities over 1E+12cm-3 enabling high etch rates and selectivities.

Plasma-Therm Deep Silicon Etcher

The PlasmaTherm Versaline system is a state of the art tool for DRIE of silicon. It provides the etch precision and process latitude necessary to create next generation nanoscale and MEMS devices. This platform enables sub-second etch and deposition steps producing much smoother sidewalls as scalloping is reduced to a minimum.

PT72 Etcher

This 10-inch diameter parallel plate, turbo-pumped RIE system is dedicated to applications involving fluorine based plasmas including CHF3, CF4, and SF6. Applications include anisotropic etching of silicon, silicon dioxide and silicon nitride. Etch rates of common materials vary from about 10 nm/min up to 50 nm/min.

Unaxis 770 Deep Silicon Etcher

A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium.  Photonics etch for shallow silicon etching is available as well.

YES Asher

Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate.