Dry etching systems for transferring your nanoscale patterns into your substrates.
The AJA Ion Mill is a 22cm diameter Kaufman RF-ICP gridded ion source producing a collimated Argon ion beam which provides uniform etching of samples up to 6 inch diameter. The sample holder is water cooled at 20 degrees C. and has motorized tilt (0-180 degrees), and continuous sample rotation up to 25 RPM. The system is Cryo Pumped with a base pressure in the 10-8 torr range.
The Anatech USA, model SCE-110-RF, Oxygen plasma Asher is a 10 inch diameter all quartz barrel asher. It is ICP powered 13.56 MHz up to 1000 Watts. It is equipped for both oxygen and nitrogen plasma.
The Glen 1000 system utilizes a oxygen plasma source for stripping of photoresist and other organics. The tool can be setup to give direct ion bombardment or in a downstream ion mode for lower surface damage.
The Hamatech wafer processor is capable of doing a hot piranha (Sulfuric Acid and Hydrogen Peroxide) clean on photomasks (4, 5, 6, & 7 inch) and wafers (3, 4, 6, and 8 inch). It is also capable of performing ammonium hydroxide brush cleans of substrates.
Hot Phosphoric Acid - Boiling phosphoric acid is used for etching silicon nitride selectively to silicon oxide. The tank is specifically designed for nitride etching with a controller that can maintain the phosphoric acid boiling point to within 0.5°C. This setup is for electronic grade substrates only.
The Oxford Plasmalab 100 is an inductively coupled plasma based system that is configured for silicon-based dielectric etching. The system consists of one ICP process module connected to a single automated wafer transfer load lock. It is equipped with Helium backside cooling and a 10C electrode.
The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.
The system has a 300W 13.56 MHz RF power source coupled to a matching network. The biased electrode is actively chilled to 10 degrees C. The operating pressure regime for processes in the PlasmaLab 80+ is 10 - 1000mT.
The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.
The system has a 300W 13.56 MHz RF power source coupled to a matching network. The biased electrode is actively chilled to 10 degrees C. The operating pressure regime for processes in the PlasmaLab 80+ is 10 - 1000mT.
The Oxford PlasmaPro system 100-380 is configured for nanoscale etching. The system is an inductively coupled plasma (ICP) based reactive ion etch platform with a very large plasma generation area of 380mm in diameter. This combined with the large 240mm electrode diameter allows for highly uniform etching over a 200mm sized area. The ICP is powered with a 3kw RF generator operating at 2MHz achieving plasma densities over 1E+12cm-3 enabling high etch rates and selectivities.
The PlasmaTherm Versaline system is a state of the art tool for DRIE of silicon. It provides the etch precision and process latitude necessary to create next generation nanoscale and MEMS devices. This platform enables sub-second etch and deposition steps producing much smoother sidewalls as scalloping is reduced to a minimum.
Atomic Layer Etching system configured with an ICP and loadlock
The Primaxx µEtch system is designed for low volume single wafer vapor HF etching. The system can accommodate a wafer with diameter up to 200mm.
This 10-inch diameter parallel plate, turbo-pumped RIE system is dedicated to applications involving fluorine based plasmas including CHF3, CF4, and SF6. Applications include anisotropic etching of silicon, silicon dioxide and silicon nitride. Etch rates of common materials vary from about 10 nm/min up to 50 nm/min.
The 720/740 is a dual chamber loadlocked system RIE system with very few materials restrictions. Exposed gold is allowed in this chamber.
The 720/740 is a dual chamber loadlocked system. This is a category 5 tool with few materials restrictions.
Exposed gold is allowed in this chamber.
The PT770 is a dual chamber ICP system. The left chamber is dedicated to chlorine based metal etching.
The PT770 is a dual chamber ICP system. The left chamber is dedicated to chlorine based metal etching while the right chamber is dedicated to III-V etching.
Trion Minilock III is an ICP system and the only one at CNF which allows Category 5 materials.
A single chamber (licensed Bosch fluorine process) inductively coupled plasma / reactive ion etcher, the Unaxis SLR 770 etcher is used to etch deep patterns in single crystal silicon substrates. The resulting features are used for MEMS and biological applications. Etch rates of up to 2 microns per minute and aspect ratios of 20:1 can be obtained using photoresist or silicon dioxide as a masking medium. Photonics etch for shallow silicon etching is available as well.
This is a XeF2 based vapor phase etch system for isotropic and selective silicon etching.
Vacuum system with Oxygen Plasma, designed for Resist Stripping and Descum. It uses a 9" diameter Hot Plate stage to control wafer temperature. The system is used to strip resist off single wafers, up to 8" diameter. The 40 KHz plasma is isolated from the wafer by a grounded, perforated metal plate.
The YES EcoClean is a single wafer, downstream ICP stripper designed for photoresist and polyimide strip, descum, and inorganic substrate cleaning/surface modification. The remote ICP source produces a high-density oxygen plasma and confines any charged plasma species to the plasma chamber such that only charge-neutral species flow from the source to the substrate. The tool can process silicon and gallium arsenide wafers of 2", 3", 4", 5", 6", and 8" diameter. Tool capabilities include 3,000 W RF power and hot plate temperature up to 300 C for fast resist removal.