Tools for depositing insulating, semiconducting, and metallic films on your substrates.
A cryopumped sputter deposition system allows deposition of a variety of metals and dielectrics. A full target list is available below. Both RF and DC sputtering is available on this system. This is a single wafer load-lock tool capable of accommodating up to 6 inch wafers. With rotation during deposition, less than 1% uniformity is encountered over a 4 inch substrate.
The AJA 2 Orion 8 system at CNF has two DC power supplies, 4 3" diameter sputter guns for deposition of a variety of materials. The tool also has one 2" diameter sputter gun for deposition of magnetic materials. The tool also has an RF power supply for substrate cleaning prior to deposition. Current targets available in this tool include: Co, Ni, Al, Ti, Cu, Ta, Pt, Ru, TiW, W, Al/1%Si, AlSiCu and a variety of other materials. Multiple DC power supplies allows for co-sputtering of metallic materials including magnetic alloys.
The AJA 3 system at CNF has two DC power supplies allowing for co-sputtering of materials. The tool also has an RF supply for substrate cleaning and preparation. Currently available targets include: Ag, Au, Ti, Al, Cu, Pd and others.
Process gasses include: Argon
The AJA Quantum Materials Deposition System is a multifunctional phyisical vapor deposition that is dedicated to quantum materials research activities. The tool has a loadlock with in situ ion mill and controlled oxidation system capable of oxidizing films at 10 and 100 Torr. The main chamber has 3 standard magnetron sputter sources and an adjustable proximity sputter source. The chamber also has an in situ ion mill for substrate cleaning and a 6 pocket electron beam evaporation system with a loadlocked crucible exchange.
The AJA Quantum Materials Sputter Deposition System is a loadlocked UHV sputter deposition system equipped with a variety of functionalities to enable the creation of next generation quantum devices. The tool has both RF and DC sputtering capability, RF substrate pre-treatment and in chamber ion source for substrate cleaning. The chamber has two sputter guns for deposition of various materials as well as two manually adjustable off axis sputter guns for low energy sputter deposition.
This tool was designed for the deposition and oxidation of thin films to create Josephson Junctions.
No evaporations, oxidations, or ion milling for unrelated purposes.
The Arradiance Gemstar-6 ALD system is a benchtop system capable of depositing highly conformal and uniform dielectric thin films. The films are deposited using thermal Atomic Layer Deposition.
The CHA Industries vacuum system is used for evaporating thin films by resistive heating. A cryopump enables base pressures of 10E-7 Torr range to be reached. The 2 kW power supply is used for thermal evaporation from three individually shuttered parallel sources which can be used for sequential thin films. Gold, silver, aluminum, nickel, chrome, copper and germanium are among the metals available for deposition. Films up to 500 nm can be deposited. This system is a rapid turn-around machine with a typical pump down time of 45 minutes.
Tanks and solutions are available for electroplating on substrates up to 6 inch wafers. Applications include electroplating copper for damascene wiring, electroplating into resist molds to form high aspect ratio structures, and deposition of thicker films (> 5 µm) on substrates.
Tanks and solutions are available for electroplating on substrates up to 6 inch wafers. Applications include electroplating copper for damascene wiring, electroplating into resist molds to form high aspect ratio structures, and deposition of thicker films (> 5 µm) on substrates.
Tanks and solutions are available for electroplating on substrates up to 6 inch wafers. Applications include electroplating copper for damascene wiring, electroplating into resist molds to form high aspect ratio structures, and deposition of thicker films (> 5 µm) on substrates.
The OEM Endeavor M1 is capable of depositing highly crystalline C-Axis oriented aluminum nitride films. This unique design of this tool allows for deposition of 2 um AlN films in approximately 45 minutes in comparison do DC magnetron sputtering processes that would take many hours to achieve the same thickness.
The tool also has the ability to tune film stress via an integrated stress adjustment unit and by adjusting process parameters for released device application.
An external chamber heater is available for substrate degassing and heated deposition.
Atomic Layer Deposition (ALD) offers the opportunity to create precisely controlled structures for advanced semiconductor and other nanotechnology applications, by creating ultra-thin films on nanometre and sub-nanometre scales. A unique property of ALD is its ability to deposit material conformally into high aspect ratio features. The technology is widely regarded as a key enabler of the next generation of smaller semiconductor devices.
The Oxford PlasmaPro ASP has been designed to ensure high quality materials that can be deposited at speed with flexibility to run multiple chemistries to give excellent layers for incorporation into devices. This cutting-edge Plasma Enhanced ALD system offers flexibility, conformality, and tunability of ALD with speed for higher throughput and thicker films. Processes under development include Al2O3, AlN, SiO2, Si3N4, HfO2, HfN, TaO5, TaN, TiO2, TiN, ZrO2, and ZrN.
The Oxford Plasma Enhanced Chemical Vapor Deposition (PECVD) system has processes for Silicon Oxide, Silicon Nitride, amorphous Silicon, Boron and/or Phosphorous doped Silicon Dioxide, as well as highly conformal TEOS-based Silicon Dioxide. This loadlocked system capable of 3", 4", 150mm, or 200mm wafers, as well as pieces on a carrier.
The PDS 2010 LABCOTER deposition system is designed for deposition of protective Parylene conformal coatings. It is set only for Parylene C. This is suitable for laboratory research applications, circuit board repairs, electronic sensors, medical components, organic samples, and many other substrates.
The PDS 2010 LABCOTER deposition system is designed for deposition of protective Parylene conformal coatings. It is set only for Parylene C. This is suitable for laboratory research applications, circuit board repairs, electronic sensors, medical components, organic samples, and many other substrates.
High density plasma deposition for high density films at low temperatures
The Kurt J. Lesker sputtering tool is currently configured to sputter Indium-Tin Oxide (ITO). The tool uses a 90% Indium /10% Tin target to reactively sputter with the oxygen introduced into the chamber. The composition of the ITO can be varied by controlling the percentage of oxygen that is introduced into the chamber. The lower the oxygen content; the more uniform, but the less transparent and more metallic the film will be. The tool has substrate rotation and heating capabilities up to 350°C. By heating the substrate you can create denser films.
This cryopumped evaporator contains a 6 pocket electron gun source. The rotation pocket ensures that all evaporations occur from the same point leading to accurate lift-off patterning. Source materials include a variety of metals, semiconductors, as well as silicon dioxide & alumina. Pump down times are generally in the 30 - 45 minute range with total processing time under 2 hours
This cryopumped evaporator contains a 4 pocket electron gun source and 3 thermal evaporation sources. The thermal sources move over the electron gun so that all evaporations come from the same vertical plane. This is particularly important for fine line metallizations by lift-off where misalignment is not tolerable. The combination of e-gun and thermal sources allows one pump down evaporation of layered materials such as Ti-Pt-Au. Scheduling for this evaporator is restricted to odd hour starting times (2 hours).
Seki Diamond CVD tool for depositing CVD polycrystalline and crystalline diamond for Quantum applications on 2" substrates.