For training, please contact the Tool Manager(s).
- No gold or silver etching
- No high vapor pressure materials (lead indium, ITO)
- No microscope slides
This 10-inch diameter parallel plate, turbo-pumped RIE system is dedicated to applications involving fluorine based plasmas including CHF3, CF4, and SF6. Applications include anisotropic etching of silicon, silicon dioxide and silicon nitride. Etch rates of common materials vary from about 10 nm/min up to 50 nm/min.
- Fluorine based gases CHF3, SF6, CF4
- Turbo molecular pumped
- Micro processor controlled
- 5% uniformity
- 10-1000 mT processing pressure
- Controlled anisotropic etching
- Variable gas chemistry
- Selective etching