PlasmaTherm 770 two chamber inductively coupled plasma etching system. The right side is dedicated to etching of III-V based materials.

For training, please contact the Tool Manager(s).

Additional Restrictions
  • III-V (GaAs, InP, GaN, etc.)
  • Photoresist, oxide, nitride, nickel masking only
  • Photoresist mask - edge bead must be removed (5mm ring) if using 4 wafers
  • No bulk silicon etching
  • Limited metal masking allowed - see tool manager

The PT770 is a dual chamber ICP system. The left chamber is dedicated to chlorine based metal etching while the right chamber is dedicated to III-V etching.

  • Load Locked sample introduction
  • Turbomolecular pumping
  • Microprocessor etch recipe control
  • III-V based materials etching in the right chamber
Processes Available

GaAs, GaN, InP and associated tertiaries and quarternaries of these materials can be etched in the right chamber.