PlasmaTherm 770 two chamber inductively coupled plasma etching system. The right side is dedicated to etching of III-V based materials.

For training, please contact the Tool Manager(s).

Additional Restrictions
  • Photoresist, oxide, nitride, nickel masking only
  • Photoresist mask - edge bead must be removed (5mm ring) if using 100mm wafers
  • Limited metal masking allowed - see tool manager

The PT770 is a dual chamber ICP system. The left chamber is dedicated to chlorine based metal etching while the right chamber is dedicated to III-V etching.

  • Load Locked sample introduction
  • Turbomolecular pumping
  • Microprocessor etch recipe control
  • III-V based materials etching in the right chamber
Processes Available

GaAs, GaN, AlN, and InP as well as associated tertiaries and quaternaries of these materials can be etched in the right chamber.