Additional Restrictions
- Category 3 MOS CLEAN required prior to use
Additional Restrictions
- Category 3 MOS CLEAN required prior to use
Additional Restrictions
- No gold or silver etching
- No high vapor pressure materials (lead, indium, ITO)
- No microscope slides
- Do not exceed maximum RF power of 300W
- Do not clean chamber with wipes or solvent. Report contamination to tool manager
Additional Restrictions
- If any polymer is present on wafer, 5mm of the edge must be removed
- Polymers must be fully cured at least 25C hotter than the deposition temperature
- No metals should be exposed to the plasma without staff approval
Additional Restrictions
- 4-inch wafers only.
- Photoresist mask - edge bead must be removed (5mm ring) if using 4-inch wafers
- Pieces should be mounted to sapphire wafer
- Do not change recipes without staff approval
Additional Restrictions
- III-V (GaAs, InP, GaN, etc.)
- Photoresist, oxide, nitride, nickel masking only
- Photoresist mask - edge bead must be removed (5mm ring) if using 4 wafers
- No bulk silicon etching
- Limited metal masking allowed - see tool manager