For training, please contact the Tool Manager(s).
General training is "hands on"and will cover DC and RF sputtering. Training takes 3 hours, which includes machine operation with a short film deposition. To avoid having to retrain on the machine, the AJA sputtering tool must be used within a week of getting trained.
Advanced training consists of reactive Sputtering with O2, or N2.
- No high vapor pressure substrates or films (Lead, Zinc, Indium,
- ITO, Tin, Cadmium, etc)
A cryopumped sputter deposition system allows deposition of a variety of metals and dielectrics. A full target list is available below. Both RF and DC sputtering is available on this system. This is a single wafer load-lock tool capable of accommodating up to 6 inch wafers. With rotation during deposition, less than 1% uniformity is encountered over a 4 inch substrate.
- RF and DC sources
- Cryopumped to 2E-8 Torr
- Capacity: Single substrate - load-lock
- Mass flow control for Argon, Nitrogen, and Oxygen
- Substrate rotation
- RF Backsputter and RF in-situ substrate clean
Targets available (3 inch diameter)are: Al, Al+1%Si, Al+1%Si+4%Cu, Cr, Cu, MoSi, SiO2 (RF TARGET), Ti, TiW, W, Ta, Mo, Pt, Ge, Si, Nb
Process data consisting of grain structure, roughness, stress, depositions rates and step coverage is provided in a printed manual near the AJA tool. Furthermore, Additional Resources (section below) includes a link to a pdf file of the process data.
Follow the target changing guidelines when requesting targets.