Noncontact tool for measuring film stress by Toho

Training is a combination of machine demonstration, and hands on use, which takes about one hour. For training email George McMurdy [email].

Additional Restrictions
  • Whole wafers only
  • Wafer top surface must reflect a laser beam, without too much scatter.
  • Wafer/substrate material must be included in the Flexus software list of material data.

A laser scan technique is used to measure wafer surface curvature before, and after wafer processing. Two wavelengths (670 nm and 780 nm) are available to ensure adequate reflected signal from the wafer. The calculated change in curvature is then used to calculate the stress in the film. The wafer is scanned on a hot plate which can be programed for stress vs. temperature measurements.