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- Whole wafers or masks sized for available chucks only
- No thick resist or organic layer stripping - piranha etch to be used for stripping residual material only!
- Check wafer for materials incompatible with cleaning chemistry to prevent substrate damage
The Hamatech wafer processor is capable of doing a hot piranha (Sulfuric Acid and Hydrogen Peroxide) clean on photomasks (4, 5, 6, & 7 inch) and wafers (3, 4, 6, and 8 inch). It is also capable of performing ammonium hydroxide brush cleans of substrates.
- Hot piranha clean
- 3", 4", 6", 8" wafers
- 4", 5", 6", 7" masks
- Ammonium hydroxide brush clean
Hot Piranha Solution:
A mixture of Sulfuric Acid and Hydrogen Peroxide is used to clean the organic residue of substrates. The mixture is a strong oxidizing agent. It will both decompose most organics and hydroxylate the substrate's surface hence making it hydrophilic. CNF (Cornell NanoScale Facility) does not allow this mixture to be mixed or disposed of at the CNF by any users. The Hot Piranha is the only location where the solution is automatically mixed. The waste is also automatically sent to the in-house chemical neutralization system during a typical process. NanoStrip is an alternate chemically stable pre-mixed that can be used on the general chemical hoods.
- Substrate Cleaning Preparation