Oxford PlasmaLab 80+ RIE System for fluorine based etching of oxide, nitride, & silicon

For training, please contact the Tool Manager(s).

Additional Restrictions
  • No gold or silver etching
  • No high vapor pressure materials (lead, indium, ITO)
  • No microscope slides
  • Do not exceed maximum RF power of 300W
  • Do not clean chamber with wipes or solvent. Report contamination to tool manager

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.

The system has a 300W 13.56 MHz RF power source coupled to a matching network. The biased electrode is actively chilled to 10 degrees C. The operating pressure regime for processes in the PlasmaLab 80+ is 10 - 1000mT.

The system also includes an Optical Emission Spectroscopy module, which is capable of endpoint detection and plasma composition analysis. This allows the etch depth to be used to control when an etch process is stopped, as well as determine chamber conditioning.

  • CHF3
  • CF4
  • SF6
  • Argon
  • Hydrogen
  • Oxygen
Processes Available
  • SiO2 etch
  • Si3N4 etch
  • Si etch
  • ARC etch
  • Resist descum