Oxford Cobra HBr etcher

For training, please contact the Tool Manager(s).

The training time is less than 1 hour.

Additional Restrictions
  • No III-V material etching
  • Remove the resist bead from whole 4-inch wafers
  • Pieces should be mounted to the sapphire wafer

The Oxford PlasmaPro system 100-380 is configured for nanoscale etching. The system is an inductively coupled plasma (ICP) based reactive ion etch platform with a very large plasma generation area of 380mm in diameter. This combined with the large 240mm electrode diameter allows for highly uniform etching over a 200mm sized area. The ICP is powered with a 3kw RF generator operating at 2MHz achieving plasma densities over 1E+12cm-3 enabling high etch rates and selectivities.


The system is configured for 100mm diameter wafers and is clamped with He backside cooling. Smaller substrates can be accommodated by mounting to a 100mm sapphire wafer. The tool is equipped with a wide temperature range from cyrogenic temps. (-150C) to heated electrode temps up to 400C. In addition, optical emission spectroscopy (OES)is installed to enable endpoint detection and to monitor chamber conditions. The system is loadlocked for sample entry and removal.

Processes Available

The tool is equipped with the following gas chemistries:

HBr, Cl2, BCl3, SF6, O2, H2, Ar and CH3OH. Its purpose is to etch silicon, germanium, silicon carbide, diamond and magnetic based materials. Silicon etching can be facilitated with either HBr, Cl2, or SF6 based chemistries.  Limited metal etching is available (eg. W and TiW).

Magnetics can be etched with methanol or chlorine based chemistries.


The applications of the etch system are many and include:

  • nanoscale Si opto-mechano-electro systems
  • nanoscale Si based transistors
  • conventional Si based MEMS/NEMS
  • nanoscale spintronic devices
  • high density nonvolatile memory elements
  • spin based logic devices
  • nanoscale frequency tunable microwave sources and oscillators
  • silicon carbide based devices