Atomic Layer Deposition

For training, please contact the Tool Manager(s).

Compatibility:
5 - Class A and B Metals and Compounds
Additional Restrictions
  • No films thicker than 50nm or 500 loops without permission of the tool managers
  • No changing of recipes other than loop count without permission of the tool managers
  • Full size 100mm wafers (other wafer sizes up to 200mm can be accommodated with staff assistance).
  • Pieces can be processed with the use of the dedicated Aluminum carrier plate.
  • Polymers and resist need to be fully cured and only run using 110C processes
Manager
Jeremy Clark
Backups:
Mac McMurdy
Oxford ALD

Atomic Layer Deposition (ALD) offers the opportunity to create precisely controlled structures for advanced semiconductor and other nanotechnology applications, by creating ultra-thin films on nanometre and sub-nanometre scales. A unique property of ALD is its ability to deposit material conformally into high aspect ratio features. The technology is widely regarded as a key enabler of the next generation of smaller semiconductor devices.

Capabilities

Available thin film materials:

  • Al2O3-plasma and thermal
  • AlN-plasma
  • HfO2-plasma and thermal
  • HfN-plasma
  • TaN-plasma and thermal
  • Ta2O5-plasma and thermal
  • SiO2-plasma
  • Si3N4-plasma
  • HfAlOx-plasma
  • HfSiOx-plasma
  • HfSiOxNy-plasma
Applications

These highly uniform thin films (<50nm) can be used as high-k dielectrics and metal gates for advanced transistor fabrication, along with applications to MEMS/NEMS and photonics applications.

Equipment Information Sheet
Resources:
ALD Characterization