SubTitle
Oxford 100 PECVD System
Tool Location
107
Training
For training, please contact the Tool Manager(s).
Compatibility:
Additional Restrictions
- No general material restrictions
- Resists or other polymers must be cured at 25C above the temperature of the hotplate.
- RF Power is limited to 200W
Manager
Backups:
Body
The Oxford Plasma Enhanced Chemical Vapor Deposition (PECVD) system has processes for Silicon Oxide, Silicon Nitride, amorphous Silicon, Boron and/or Phosphorous doped Silicon Dioxide, as well as highly conformal TEOS-based Silicon Dioxide. This loadlocked system capable of 3", 4", 150mm, or 200mm wafers, as well as pieces on a carrier.
Capabilities
- Low pressure plasma decomposition/reaction of Silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
- Load Locked system capable of 3", 4", 150mm, or 200mm wafers
- Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
- Typical process pressure: 1.8 Torr
- Process temperature range of 200 to 400 C, baseline processes are 350C
Processes Available
Currently available:
- Silicon Oxide
- Stress controlled Silicon Nitride
- amorphous Silicon
- Boron and/or Phosphorous doped Silicon Dioxide
- TEOS-based Silicon Dioxide
Under development:
- amorphous Silicon Carbide
- amorphous Boron Nitride