SubTitle
Oxford 100 PECVD System
Training

For training, please contact the Tool Manager(s).

Additional Restrictions
  • No general material restrictions
  • Resists or other polymers must be cured at 25C above the temperature of the hotplate.
Body

Currently available processes:

  • Silicon Oxide
  • Stress controlled Silicon Nitride
  • amorphous Silicon
  • Boron and/or Phosphorous doped Silicon Dioxide
  • TEOS-based Silicon Dioxide

Currently being characterized:

  • Silicon Carbide
  • Boron Nitride
Capabilities
  • Low pressure plasma decomposition/reaction of Silane & other gases predominantly to form dielectrics for passivation & masking layers at low temperatures
  • Load Locked system capable of 3", 4", 150mm, or 200mm wafers
  • Gases: SiH4, N2O, NH3, PH3, B2H6, CH4, TEOS, CF4, and O2
  • Typical process pressure: 1.8 Torr
  • Process temperature range of 200 to 400 C, baseline processes are 350C