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Phil Infante
Title
PECVD, MOS, Safety
Email - Directory
infante@cnf.cornell.edu
Office Phone
607-254-4926
Manager for:
Boron Doping - D1
Carbon Nanotube/Graphene Furnace
Category 3 LPCVD LTO410 - A3
Category 3 MOS Clean Bench & Tanks
Category 3 Polysilicon - A4
CMOS Gate Oxide - E1
CMOS N+ Polysilicon - D3
CMOS P+ Polysilicon - D4
CMOS Undoped Poly - E3
CMOS Wet Oxide - E2
Everbeing 4-Point Probe
Everbeing EB-6 DC Probe Station
Filmetrics RS50
General Material Anneal 1 - A1
Hot Phosphoric Tank
Keithley 4200A - IVCV Testing Station
LPCVD CMOS Nitride - E4
LPCVD LTO - B3
LPCVD Nitride - B4
LPCVD TEOS - C3
MOS Clean Anneal 2 - B1
MOS Clean Bench & Tanks
MOS Metal Anneal 3 - C1
MOS Metal Anneal 4 - C2
N+/P+ Polysilicon - C4
Nanostrip Tank
Phosphorus Doping - D2
POCL3 Doping - A2
Soft Materials 4-pt Probe Station (2nd floor)
Wet/Dry Oxide - B2
Backup for:
Oxford PECVD
Primaxx Vapor HF Etcher
PVD 75 Sputter Deposition
RTA - AG610a
RTA - AG610b
Spin Rinse Dryers
Wet Scrubber

Please acknowledge the CNF in your presentations, posters, and publications.

This material is based upon work supported by the National Science Foundation under Grant No. NNCI-2025233. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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