The first part will be on PowerPoint followed by a hands-on portion

Compatibility:
2 - Silicon Based Substrates and Select Refractory Metals
Additional Restrictions

Allowed:

  • Substrate: Sapphire, Silicon, Diamond only.
  • Prior-deposited material (either in Angstrom-Q or other tools): Nb, Ti, Al, Ta, Pt.
  • Resist: e-beam resist (MMA/PMMA) only.
    • Other e-beam resists can be discussed.

Prohibited, on the surface or buried:

  • Any magnets
  • Au, Ag, Cr, Ni
  • Photoresist
    • only allowed if no ion milling or oxygen plasma
Manager
Aaron Windsor
Backups:
Shilling Du

This tool was designed for the deposition and oxidation of thin films to create Josephson Junctions. No evaporations, oxidations, or ion milling for unrelated purposes.

Capabilities
  • Load-lock e-beam evaporator; base pressure on the order of 1E−9 Torr.
  • Two chambers: lower deposition, upper oxidation. After loading, the substrate remains in the oxidation chamber.
  • Substrate rotation (typ. 5–20 rpm); tilt up to ±95 deg.
  • Optionally, the uniformity shutter can be programmed to correct the non-uniformity created by the tilt angle after calibration.
  • Thermal oxidation (with Oxygen and Argon gases) modes:
    • Dynamic: pressure control in the ∼ 1 mTorr to 90 mTorr range (active flow).
    • Static: pressure control in the ∼ 1 Torr to 90 Torr range (no active pumping).
  • Substrate heating via holder up to 800 °C (typ. ramp and stabilize ∼1 h; temperature calibration via reference vs. wafer thermocouples).
  • Dual quartz crystal monitors at the Oxidation chamber for thickness reading; Eight quartz crystal monitors at the Evaporation chamber for deposition rate reading; integrated residual gas analyzer (RGA) at the Oxidation chamber to be used at low vacuum < 1 mTorr.
  • KDC ion source at the Oxidation chamber for pre-clean with Oxygen and Argon gases.
Equipment Information Sheet