Rapid Thermal Anneal - AG Associates Model 610

For training, please contact the Tool Manager(s).

Additional Restrictions
  • No samples with resist, glue, metals, or anything that may degas
  • Calibrated for whole Silicon wafers
  • Discuss pieces or other materials with tool manager

The AG Heatpulse 610 uses high intensity, visible radiation to heat samples for short periods (1-600 seconds) at precisely controlled temperatures. The steady state temperature range is from 400-1150 C and the heating rate is variable from 1-200 C per second. This is an atmospheric pressure system with limited capability for modification of annealing ambient with oxygen, argon, nitrogen, or forming gas (5% H2 in Ar). Precise time-temperature profiles can be tailored for a variety of processing applications including ion implant activation, annealing, oxide reflow, silicide formation, contact alloying, and gallium arsenide processing. Samples up to and including 150 mm wafers can be accommodated.