CMOS compatible wet oxidation for silicon based substrates. 1100 C maximum temperature.
Tool Location
103

For training, please contact the Tool Manager(s).

Compatibility:
1 - Restricted Silicon Based Materials Only
Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders and wands
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank E

Dry oxidation for CMOS compatible silicon based substrates. 1100 C max temperature, O2, HCL and N2O oxidations

Capabilities

CMOS compatible wet oxidation for silicon based substrates. 1100 C maximum temperature.

Equipment Information Sheet