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Tool Category 1:Restriced Silicon Based Materials Only
Allowed Not Allowed

Silicon Based Materials only

(Si, SiC, SiO2 substrates)

 No Evaporated, Sputtered, or Spin on Films
All Furnace grown or deposited films No ALD films
PECVD Films No Metal or Organic Films
  No Glass Substrates
  No III/V Compound Semiconductors
  No Deep Silicon Etched Samples (versaline, Unaxis)
  No Organic/Biology Molecules prepared-with or without Salt buffers

 

CMOS Gate Oxide - E1

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders and wands

CMOS N+ Polysilicon - D3

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use designated MOS holders, wands and tweezers

CMOS P+ Polysilicon - D4

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use desginated MOS holders, wands and tweezers

CMOS Undoped Poly - E3

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

CMOS Wet Oxide - E2

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

LPCVD CMOS Nitride - E4

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers