SubTitle
ASML PAS 5500/300C DUV Wafer Stepper
Training

Tool access requirements

1. General photolithography training, online and in-person.
2. Tool-specific training, online and in-person.

Please schedule training within a week of your first anticipated use.

1. General photolithography training

For the online part of general photolithography training, use CU Learn:

RSRCH - CNF - General Photolithography Overview Video Training (NetID)

RSRCH - CNF - General Photolithography Overview Video Training (GuestID)

Additionally, find required and recommended reading here:

CNF Users: Photolithography

For in-person general photolithography training, contact:

Giovanni Sartorello

Garry Bordonaro

2. Tool training

For the online part of ASML stepper training, use CU Learn.

Training part #1:

RSRCH - CNF - ASML Stepper Training Video (NetID)

RSRCH - CNF - ASML Stepper Training Video (GuestID)

Training part #2:

RSRCH - CNF - ASML Wafer Stepper Job Programming Video Training (NetID)

RSRCH - CNF - ASML Wafer Stepper Job Programming Video Training (GuestID)

Additionally, find tool-specific required and recommended reading in the "Resources" section below.

For in-person training, contact the tool manager.


Training for PROLITH lithography simulation software is also available in CULearn:

RSRCH - CNF - PROLITH Video Training (NetID)

RSRCH - CNF - PROLITH Video Training (GuestID)

Additional Restrictions
  • Standard SEMI spec wafers ONLY based on current tool configuration
  • Carrier wafers MUST be approved by Photolith staff
  • Back of substrate must be CLEAN - NO RESIST on back
  • Mask must be CLEAN - no resist or fingerprints
Body

This projection printer uses a DUV (248nm) lens column (0.63 N.A.) to provide a 4:1 reduction with an exposure field size up to 22mm square. Minimum feature size is <0.20µm. The number and placement of the dies is programmable. Wafer sizes of 3" up to 200mm can be accommodated, and pieces with significant effort. Registered alignment is typically <0.045µm, even when using backside alignment. 6" x 0.250"-thick quartz masks are used.

Capabilities
  • Step and repeat exposure system with laser-controlled stage motion
  • Zeiss lens with 0.63 - 0.40 Variable N.A.
  • DUV (248 nm) exposure wavelength
  • Programmable Annular Illumination modes
  • 22 x 22 mm field size
  • 3D-Align Backside alignment