MRL Industries Furnace for nitrogen anneals or oxidation of nonelectronic substrates

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.


The Anneal 1 Furnace is an atmospheric furnace with a 42” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with N2 gas for inert ambient processing, H2 for forming gas mixtures with N2, and O2 for dry oxidation with or without HCL. Most sample materials are accommodated.

  • N2 and H2/N2 Anneals up to 5% H2 max
  • Dry Oxidation
  • HCL during oxidations up to a 4% level
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1100 °C