MRL Industries Furnace for annealing silicon wafers with a limited set of metals

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.


The Anneal 4 Furnace is an atmospheric furnace with a 40” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with N2 and Ar gas for inert ambient processing, H2 for forming gas mixtures, and O2 for dry oxidation with or without HCL. Samples are restricted to silicon based materials and a limited set of approved metal films.

  • N2 and Ar Anneals
  • H2/N2, H2/Ar Anneals up to 5% H2 max
  • Dry Oxidation
  • HCL during oxidation up to a 4% level
  • Low flow O2 processes
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1100°C