MRL Industries Furnace for LPCVD Siliicon Nitride deposition on Category 3 subsrate materials - Gallium Nitride, Gallium Oxide
Tool Location
103

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Compatibility:
3 - Silicon, III-V Compound Semiconductor, Glass and Metal Category
Additional Restrictions
  • Category 3 MOS CLEAN required prior to use
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank A

The Category 3 LPCVD Silicon Nitride furnace can deposit stoichiometric and low stress silicon nitride on III-V substrates.  The tool can deposit on pieces, 100mm and 150mm substrates.

Capabilities
  • Stoichiometrice Silicon Nitride
  • Tunalble Low Stress Silicon Nitride (150-300 MPa Tensile)
  • 15-25 A/min dep rate
Equipment Information Sheet