MRL Industries Furnace for low temperature oxide depositions on Category 3 and TFT compatible substrates

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Compatibility:
3 - Silicon, III-V Compound Semiconductor, Glass and Metal Category
Additional Restrictions
  • Category 3 MOS CLEAN required prior to use
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank A

The TFT Low Temperature Oxide furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are SiH4 and O2 for silane base oxides and diethysilane (LTO410) for liquid source based oxide. Samples are restricted to silicon and TFT compatible glass materials only.

Capabilities
  • Low temperature deposited oxide
  • 20 nm/min dep rate at 425°C
  • LTO 410 deposited oxide at 400°C
Equipment Information Sheet