MRL Industries Furnace for LPCVD Silicon Carbide deposition. The furnace can deposit pieces, 100mm and 150mm substrates. Deposition temperatures range from 800 to 900 C
Tool Location
103

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email

Compatibility:
1 - Restricted Silicon Based Materials Only
Additional Restrictions
  • MOS CLEAN required prior to use
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank A

The 

The LPCVD Siliocn Carbide Furnace is an atmospheric furnace with a 42” flat zone capable of processing up to 6” diameter wafers. Process gases available are Dichlorosilane, acetylene, Hydrogen and Ammonia.  Undoped poly-crystaline silicon carbide and nitrogen doped silicon carbide can be deposited.

Capabilities
  • Doped and undoped silicon carbide films 
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Equipment Information Sheet