MRL Industries Furnace for POCL3 doping of silicon wafers

Training for the furnace area covers the pre-furnace MOS clean, atmospheric and LPCVD processes. It is scheduled on a need basis, please email the tool manager for training requests. Include MOS area training in the subject header. You will be notified when the next scheduled training will be by email.

Compatibility:
1E - Silicon Based Materials and Select Dieletrics
Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers
Manager
Phil Infante
Backups:
Aaron Windsor
Furnace Bank A

The POCL3 Furnace is an atmospheric furnace with a 42” flat zone capable of processing up to 6” diameter wafers. The furnace tube is equipped with an POCL3 liquid bubbler, O2 for doping processes, dry oxidation and O2/inert mixtures, as well as an N2 anneal ambient.

Capabilities
  • Anneals in N2 ambient
  • Pieces to 6” diameter wafers can be processed
  • Maximum temperature of 1100°C
Equipment Information Sheet