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Tool Category 1E: Silicon Based Materials and Select Dieletrics
Allowed Not Allowed
Silicon Based Materials only No Evaporated or Sputtered Films
Si, SiC, SiO2 substrates No Metal or Organic Films
All Furnace grown or deposited films No Glass Substrates
PECVD Films No III/V Compound Semiconductors
Select ALD dieletrics (SiO2, SiN, HfO2, HFN) No High Vapor pressure materials
Spin on Glass and Spin on Dopants Organic/Biology Molecules prepared-with or without Salt buffers

 

High Vapor Pressure Metals and Compounds are materials that have a vapor pressure above 1e-6 Torr at 400 C.

Hot Phosphoric Tank

Additional Restrictions
  • Silicon nitride etching only - no metal etching
  • Teflon boats only!

LPCVD LTO - B3

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use designated MOS holders, wands and tweezeers

LPCVD Nitride - B4

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

LPCVD TEOS - C3

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

MOS Clean Anneal 2 - B1

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

N+/P+ Polysilicon - C4

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

Phosphorus Doping - D2

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

POCL3 Doping - A2

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

Wet/Dry Oxide - B2

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers