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Tool Category 1E: Silicon Based Materials and Select Dieletrics
Allowed Not Allowed
Silicon Based Materials only No Evaporated or Sputtered Films
Si, SiC, SiO2 substrates No Metal or Organic Films
All Furnace grown or deposited films No Glass Substrates
PECVD Films No III/V Compound Semiconductors
Select ALD dieletrics (SiO2, SiN, HfO2, HFN) No High Vapor pressure materials
Spin on Glass and Spin on Dopants Organic/Biology Molecules prepared-with or without Salt buffers

 

High Vapor Pressure Metals and Compounds are materials that have a vapor pressure above 1e-6 Torr at 400 C.

A2 - POCL3 Doping

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

AJA-Q2

Additional Restrictions

This tool is restricted to quantum computing research with associated materials. New materials will be evaluated on a case by case basis.

  • No photoresist
  • No high vapor pressure substrates or films
  • Primary materials are Aluminum, Niobium, Tantalum and Titanium

B2 - Wet/Dry Oxide

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

B3 - LPCVD LTO

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use designated MOS holders, wands and tweezeers

B4 - LPCVD Silicon Nitride

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

C3- LPCVD TEOS

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

C4 - N+/P+ Polysilicon

Additional Restrictions
  • MOS CLEAN required prior to use
  • Only use MOS designated holders, wands and tweezers

Hot Phosphoric Tank

Additional Restrictions
  • Silicon nitride etching only - no metal etching
  • Teflon boats only!